Abstract
This letter describes a new approach to maximize the quality (Q) factor of a spiral inductor without any modifications to the existing CMOS or BiCMOS processes. The proposed method is based on successively increasing the metal width from the inner to the outer turns of the spiral inductor. This method has been used to realize an optimized inductor for RF applications. The comparative evaluation shows that the optimized inductor outperforms four other spiral inductors with fixed metal widths of 10, 15, 20, and 25 μ in terms of the Q-factor without sacrificing the inductance and chip area. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 39–41, 2000.
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