Abstract

A new generation of fast-switching thyristors (FSThs) has been developed. It includes 100–1000 A/800–1200 V and 160–2000 A/2000–2500 V devices, turn-off times of them are equal to 6.3–12.5 μs and 32–63 μs, respectively. A new cathode emitter topology is proposed. It allows one to exclude the influence of the passive area of a p–n–p–n structure on the temperature dependence of maximal off-state voltage V Dm, on the values of critical rate of rise of off-state voltage (d V D/d t) cr and on the turn-off time t q. It also promotes some reduction of turn-on losses. Prototype samples of 1600–2000 A, 2500 V FSTh, having such cathode emitter topology, were fabricated. Their testing results confirm a new approach for the design of FSTh cathode emitter topology.

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