Abstract
Conventional gate turn-off (GTO) thyristors require costly dv/dt and di/dt snubber circuits as well as bulky gate drive circuits. Hard turn off in which all of the main current is commutated to the gate drive circuit with a turn-off gain of one has been looked upon as a way to reduce the dv/dt limitations of the conventional GTO. The new gate commutated turn-off (GCT) thyristor is optimized for this mode and is coupled with a low inductance gate drive circuit to greatly reduce the di/dt limitation and allow operation without a dv/dt snubber. A new soft recovery diode has been developed to provide the capability necessary to apply the superior characteristics of the new GCT in actual application.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
