Abstract
A new gas circulation RIE has been developed. It pumps the exhausted gas still containing usable process gas into the RIE process chamber to be reused. This new gas circulation RIE showed equivalent etching performances of etch rate, selectivity to Si, etching profile, and uniformity in C/sub 4/F/sub 8//CO/Ar contact hole etching process compared to the conventional process, with 50% less C/sub 4/F/sub 8/ and 80% less CO and Ar, of the original input gas flow rates. The reduction of the use of per-fluoro compound (PFC) and other process gases is effective for the suppression of the greenhouse problem and etching process cost.
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