Abstract

A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The /spl delta/(P/sup +/)GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n/sup +/-GaAs//spl delta/(P/sup +/)GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1/spl times/50 /spl mu/m/sup 2/ device.

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