A new floating active inductor using resistive feedback technique

Abstract

A new floating active inductor is proposed, with resistive feedback technique implemented. Compared to traditional CMOS spiral inductors, the active inductor proposed in this paper can substantially improve its equivalent inductance and quality factor. This resistive feedback floating active inductor was fabricated using the TSMC 0.18 um RF CMOS process, which demonstrates a maximum quality factor of 68 with a 33 nH inductance. The core area of the proposed active floating inductor is only 0.081 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> which is one tenth of a traditional spiral inductor. The proposed active inductor also shows more than ten times wide dynamic range and four times higher quality factor compared to conventional floating active inductor circuits.