Abstract
This paper aims to investigate the device parameters, including drain-induced barrier lowering (DIBL), subthreshold swing (SS), and saturation drive current, $I_{\rm d,{\mathrm{ sat}}} $ , of bulk-Si n-channel FinFET devices (bulk n-FinFETs). The impact of lightly doped drain (LDD) process on the performance of bulk n-FinFETs is also examined in this paper. According to our measured data, excluding LDD in bulk n-FinFETs not only reduces mask costs but it also enables slightly better short-channel control compared to the inclusion of LDD. A new figure of merit, $\Delta V_{\mathrm{ DIBLSS}} /(I_{\rm d,{\mathrm{ sat}}} /I_{\rm sd,{\mathrm{ leak}}} )$ , is introduced for monitoring short-channel performance of bulk n-FinFETs, where $\Delta V_{\mathrm{ DIBLSS}} $ accounts for the DIBL and SS, and $I_{\rm sd,{\mathrm{ leak}}} $ is the source/drain subthreshold off-state leakage current.
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