Abstract
The authors studied the nonalloyed ohmic characteristics of HEMTs (high electron mobility transistors). At high integration levels, nonalloyed ohmic contacts were found to have two advantages: an extremely short ohmic length with low parasitic source series resistance and direct connection between the source/drain and gate with the same metal. The propagation delay in a ring oscillator with a single-metal source/drain and gate formed simultaneously was 37 ps/gate (L/sub g/=0.9 mu m). The very short ohmic metal contacts and just three contact holes made it possible to reduce the memory cell area greatly. The cell is 21.5*21.5 mu m/sup 2/, one of the smallest ever reported for a GaAs-based static RAM. Using smaller load HEMTs or resistor loads in the memory cell, combined with nonalloyed ohmic technology with quarter- or subquarter-micrometer-gate HEMTs it is possible to fabricate a very-high-speed LSI such as a 64-kb static RAM with a reasonable chip size. >
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