Abstract
In this letter, we show a new device architecture, which we call field-induced contacts light-emitting transistor (FICOLET), to fabricate high-efficiency electroluminescent dual-gate organic field-effect transistors. The FICOLET is a dual-gate transistor in which two accumulated regions, not completely overlapped, one of electrons and the other of holes, are formed. When a positive bias voltage is applied to the drain contact, electrons and holes are pushed by the combined action of the carrier diffusion and of the electric field to the opposite side of the semiconductor. They recombine far from the electrodes with a theoretical recombination efficiency of 100%, low exciton quenching, and current densities that, in high injection conditions, can exceed the lasing threshold.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
