Abstract
A new Dual-Channel Emitter Switched Thyristor (DC-EST), which suppresses the inherent parasitic thyristor operation effectively by employing a self-aligned trench contact, has been proposed and verified by numerical device simulations. Simulation results show that the maximum controllable current density of the proposed DC-EST is about three times larger than that of the conventional DC-EST because the self-aligned trench contact reduces the resistance under the n+ cathode. It is noted that the forward voltage drop of the proposed DC-EST is lower than that of the conventional one by 0.2 V by reduced cell pitch.
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