Abstract
Reduction of channel length makes the channel current to be less than that of drain current. In this paper, by using multiplication factor model [Proc. IEEE IRPS. (1996) 318, Proc. IEEE IRPS (1999) 167] and a simple approximation of the collector current of PBT the drain current in short-channel MOSFETs is modeled and simulated. This model makes use of four parameters, which by extracting them for each device, it is possible to calculate total drain current. The simulation results from this model are compared with the results obtained from MINIMOS, in which match observed between them.
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