Abstract
Results of a thermodynamic study of 108 phase diagrams of the system Si — O2 — C plotted in the coordinatesRT lnp Q2 —T are presented. Conditions of the gas medium that intensify SiC synthesis are established. According to the phase diagrams of Si — O2 — C, carbide formation can start at 700 K. The presence of a minimum amount of SiO vapor at a ratio \(p_{CO} /P_{CO_2 } = 9\) : 1 is the most favorable condition for synthesizing SiC from silica and carbon.
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