Abstract

Abstract A new dibenzo[g,p]chrysene derivative, 3,6,11,14-tetramethoxyphenylamine- dibenzo[g,p]chrysene (MeOPhN-DBC), has been designed and synthesized. This material shows good hole-transport ability, high thermal stability, and relatively high HOMO/LUMO, suitable for anode buffer in electronic devices. When 4 nm MeOPhN-DBC was inserted between the active layer and MoO3 to form double interfacial layers in the inverted polymer solar cells based on poly (3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) blended active layer, the power conversion efficiency was improved 24.7% compared to device with only MoO3 buffer (2.95% vs 3.68%). As demonstrated by photoluminescence, electrochemical impedance spectroscopy and the atom force microscopy, as well as the energy level diagram, the insertion of MeOPhN-DBC inter layer can block exciton quenching, improve electrical conductivity of the device, smooth interfacial contact, block electron flow toward anode and thus suppress carrier recombination there, leading to improved hole extraction and OPV device performance. This work demonstrates for the first time that dibenzo[g,p]chrysene derivatives can be promising materials for anode buffer in electronic devices.

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