Abstract
Capacitance transients of NMOSFETs realized in a CCD technology have been analyzed by DLTS spectroscopy. Due to the small contribution of generation in the depleted region, the Zerbst method gives erroneous values for the effective generation lifetime. This work shows that, by analyzing the two peaks obtained in our DLTS spectra, it is possible to distinguish two mechanisms of minority carrier generation without making any assumption about the dominant process. The relative contribution of each mechanism (diffusion from the bulk and generation in the space charge region) to the inversion layer creation is obtained from a new treatment of DLTS signals.
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