Abstract
In this paper, a new single-device three-dimensional (3D) Hall sensor called a cross-shaped 3D Hall device is designed based on the five-contact vertical Hall device. Some of the device parameters are based on 0.18 μm BCDliteTM technology provided by GLOBALFOUNDRIES. Two-dimensional (2D) and 3D finite element models implemented in COMSOL are applied to understand the device behavior under a constant magnetic field. Besides this, the influence of the sensing contacts, active region’s depth, and P-type layers are taken into account by analyzing the distribution of the voltage along the top edge and the current density inside the devices. Due to the short-circuiting effect, the sensing contacts lead to degradation in sensitivities. The P-type layers and a deeper active region in turn are responsible for the improvement of sensitivities. To distinguish the P-type layer from the active region which plays the dominant role in reducing the short-circuiting effect, the current-related sensitivity of the top edge (Stop) is defined. It is found that the short-circuiting effect fades as the depth of the active region grows. Despite the P-type layers, the behavior changes a little. When the depth of the active region is 7 μm and the thickness of the P-type layers is 3 μm, the sensitivities in the x, y, and z directions can reach 91.70 V/AT, 92.36 V/AT, and 87.10 V/AT, respectively.
Highlights
In recent years, Hall sensors based on CMOS (Complementary Metal-Oxide-SemiconductorTransistor) technology have been widely used in manufacturing, electronics, aerospace, and other fields due to their low cost, high integration, and reliability
Due to the presence of the P-type layers, PN junctions are formed between the P-type and N-type regions so that the current near the top edge is compelled to flow along the PN junctions
Two orthogonal three-contact vertical Hall devices are integrated to construct a cross-shaped 3D Hall sensor which can be used to measure the magnetic field in 3D space by different biases
Summary
The drawbacks of this method are the complicated package and the high cost To solve these problems, horizontal and vertical Hall devices were integrated into the same chip [7,8,9,10,11,12]. Current-related sensitivity (SI ), a main performance parameter of Hall sensors, is related to the doping concentration of the active region and the thickness parallel to the magnetic field. Three-contact vertical Hall devices have served as vertical Hall Magnetic Sensors, such as the four-folded three-contact structure. Two orthogonal three-contact vertical Hall devices are integrated to construct a cross-shaped 3D Hall sensor which can be used to measure the magnetic field in 3D space by different biases.
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