Abstract
A new etchant for n and p bulk GaAs is described. Etching is accomplished through an electrochemical anodic process which uses NH4OH : H2O at a pH of 10.6–13.4. Etching rates depended on the current passed through the solution, while conductivity in turn depended on the pH of the solution. A large number of n+ GaAs polished wafers were characterized with this etching method. Samples etched showed growth-induced striations, dislocations, and twin lamellae. Etching was done on {111}-, {1̄1̄1̄}- {211}-, {511}-, and {110}- as well as {100}-oriented substrates with comparable results.
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