Abstract
In this study, a new Cu alloy, Cu(TiIrNx), film containing a trace amount of TiIrNx is formed by cosputtering Cu, Ti, and Ir on a barrierless (barrier-free) Ta/Al2O3 substrate within a vacuum chamber filled with either Ar or N2 gas. The Cu(TiIrNx) film formed via this barrierless metallization process reveals a resistivity of 2.63 µΩ cm and a thermal conductivity of 438 W m−1 K−1 after being annealed at 720 °C for 1 h, exhibiting a fine thermal conductivity and stability. The film produces no oxidation compounds during the annealing and, via our tests conducted in this study, appeas to be promising for some thermal dissipation-related applications, such as LEDs’ heat dissipation.
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