Abstract
The spontaneous assembly of long chain thiols on the clean oxide‐free surface of gallium arsenide has recently been reported by a group at Penn State University. In the past, the substrates on which this was possible were restricted to the group 10 and 11 metals Au, Ag, Pt, and Cu, and the oxides of silicon, aluminum and silver. The work and its consequences for GaAs‐based microelectronics are discussed.
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