Abstract
A new chemical solution has been developed to delineate crystallographic defects in thin silicon overlayers (< 1000 Å) of fully annealed SIMOX material. The new etchant is based on the HF:HNO 3:H 2O system and has proved to be superior to other etchants based upon dilute Secco solutions. Analysis by plan-view TEM has shown that SIMOX materials with a silicon overlayer as thin as 650 Å can be analyzed using this new etch.
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