Abstract
Thin films of undoped ZnO, Al-doped ZnO, Cu-doped ZnO, and AlCu@ZnO deposited on indium tin oxide were performed by the sol-gel spin coating method. The prepared ZnO thin films were investigated for their structural and electrical properties after annealing at 500 °C for 1 h. ZnO thin films were characterized by electrochemical impedance spectroscopy, linear sweep voltammetry, scanning electron microscopy, Fourier transform infrared spectroscopy and Mott Schottky. According to the results obtained from the Nyquist diagrams of the ZnO thin films, the resistance value was found to decrease with binary doping and the resistance value was found to be lowest in AlCu@ZnO doped thin film containing 0.01 M Al and 0.1 M Cu. As ZnO thin films go to cathodic potentials, it is seen that the cathodic current value of ZnO with undoped is the lowest. It has been found that only Al and Cu doping showed less cathodic current than double doping.
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