Abstract
A novel bipolar process, with arsenic emitters, has been developed. The base and the emitter are simultaneously diffused from an oxide source containing B/SUB 2/O/SUB 3/ and As/SUB 2/O/SUB 3/. Because of the slow diffusion of B in the presence of As, extremely shallow junctions have been obtained. n-p-n transistors with high h/SUB FE/, high breakdown, high f/SUB T/, and very little low current h/SUB FE/ falloff have been fabricated. Lateral p-n-p and p-channel JFET's have also been fabricated on the same chip without any extra processing step.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
