Abstract
A new solution to the two-dimensional Poisson equation, based on real physical facts has been worked out. Thus it has been possible to construct an original and physically consequent approximate model of current-voltage characteristic for short-channel MOS devices. The expressions do not contain free parameters as long as one can neglect the degradation of the carrier mobility in the inversion layer. If we take this effect into consideration, the model mentioned above will have one free (fitting) parameter only.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
