Abstract
In this work we present a new scheme for the realization of a beam profiler for excimer laser UV-light. The sensor is based on a single pixel, large area, photoconductor scanned by a red laser. The sensing principle involves the trapping occurring in the active film after the exposition to the UV radiation. Due to this effect the photoresponse to the red laser is enhanced in the regions exposed to the UV radiation, proportionally to the intensity of the overgap radiation absorbed by the active material. With this scheme, the sensor does not require the complex interconnections and reading circuitry that are needed by image sensors realized as photoconductor arrays. An ArF (193 nm) excimer laser was used to shine light on the devices, whose surface was then scanned by a red (650 nm) semiconductor laser. The current flowing through the detector was amplified and recorded by a digitizing oscilloscope (LeCroy WP690).
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