Abstract
It is proposed to use short-range ions (along with long-range ions) to obtain the thickness of the sensitive volume, d, and the SEU and SEL cross sections vs the energy deposited in this volume, /spl sigma//sub ion/(/spl epsi/). These /spl sigma//sub ion/(/spl epsi/) and d can be used for calculating the proton induced cross sections /spl sigma//sub p/. A study of Harris HM65162 CMOS SRAMs demonstrates this method. The calculated /spl sigma//sub p/ is in good agreement with the experimental /spl sigma//sub p/.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
