A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on

Wai-Kit Lee,Mansun Chan

doi:10.1109/hkedm.1998.740202

A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on

Wai-Kit Lee, Mansun Chan

https://doi.org/10.1109/hkedm.1998.740202

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Publication Date: Jan 1, 1998

Affiliation: Hong Kong University of Science and Technology, University of Hong Kong

#Non-quasi-static #Charge Partition + Show 8 more

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Abstract

A new approach is used to study the channel charge partition of MOS transistors during Non-Quasi-Static (NQS) turn-on. A 2-D device simulator is used to separate the DC and transient NQS source/drain current. The transient channel charge partition ratio can then be deduced from the corresponding terminal currents. While the 40/60 charge partition ratio in saturation region has been widely accepted, it is found to be closer to 0/100 during NQS turn-on. Also the charge partition ratio has a strong dependent on the ramp rate of the input signal.

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