Abstract
The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.
Highlights
The working principle of the 2TNV memory presented in this article is based on the model proposed by Paul, S. wherein the realisation of the non-volatile memory behaviour is attributed to the creation of an internal electric field when a voltage is applied across the device[11]
The research conducted in this paper was primarily concerned with the investigation of the SiNWs a charge storing component for future flash memory-type devices
The charging of SiNWs can be appealing to the community working in the area of Nanoscience
Summary
The working principle of the 2TNV memory presented in this article is based on the model proposed by Paul, S. wherein the realisation of the non-volatile memory behaviour is attributed to the creation of an internal (or surplus) electric field when a voltage is applied across the device[11]. The value of this electric field will define the difference between the two distinctive conductivity states[11]. Impurities and/or trapped charges may affect the performance and working mechanism of proposed device; an investigation has been undertaken to comprehend such influence on working of device, if any
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