Abstract
Electronic structures of Si(substrate)-SiO 2 (film) interface were examined non-destructively through an application of electron energy loss spectroscopy (ELS) by utilizing variable sampling depth (10 to several tens Å) of probing electrons with different energies (200–2000 eV). The ELS measurements on Si specimens with top oxide layers explored a new feature at the energy of ∼ 8 eV in the ELS spectra, which did not exist in the spectra of pure (clean) Si and thick SiO 2. The sharp interfacial structure was proposed and the possible existence of undulation in the Si-SiO 2 interface was discussed.
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