A new analytical technique for extraction of bias‐dependent drain resistance in GaAs and GaN HEMTs

Abstract

ABSTRACTTo improve the quality of transistor modeling, the nonlinear behavior of each element of the equivalent circuit must be known. There are few works devoted to the extraction of bias‐dependent drain resistance Rd, which strongly affects the transistor modeling. In this work, a new analytical technique for the extraction of bias‐dependent drain resistance in HEMT small signal model (SSM) is proposed. The efficiency of the new technique is demonstrated for GaN and GaAs HEMTs. It is shown that the new approach leads to the better SSM accuracy in the range of DC biases as compared to the widespread extraction methods. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2536–2539, 2015