Abstract

Based on the parabolic approximation, a new analytical model for junctionless cylindrical surrounding-gate (JLCSG) MOSFETs is presented. The influence of transition between depleted channel and the source/drain neutral region on the channel's potential is considered in presented model. Using this analytical model, the electrostatic potential of JLCSG MOSFETs is investigated. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.

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