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Abstract
In this paper, a new SPICE-compatible circuit model for low-voltage power FLIMOSFETs is presented. This modeling is based on device physics and uses a new expression for the current–voltage characteristics in the linear region. Consequently, the new model gives better results than the SPICE level 3 MOS model, widely used for power MOSFET models. In addition, the interelectrode capacitances are taken into account in the model. Finally, the new model is validated by comparing the simulated and measured static and dynamic characteristics.
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