A new 2 D mathematical modeling of surrounding gate triple material tunnel FET using halo engineering for enhanced drain current

Abstract

In this paper, an analytical model is developed for new modified Surrounding Gate Triple Material Tunnel FET with halo doping engineering. The benefits of halo engineering and triple material surrounding gate SG-TFET are incorporated into a novel structure called Surrounding Gate Triple Material Tunnel FET with halo doping (H-SGTMTFET) and has been proposed. A two dimensional analytical model is created by comprehending the Poisson’s equation utilizing parabolic approximation method with appropriate device boundary conditions. The various electrical parameters such as potential, electric field along the channel, vertical direction electric field and drain current of the H-SGTMTFET are derived and analyzed. The performance analysis is done for various gate material work functions and different halo lengths namely 10 nm, 15 nm and 20 nm. It has been found that H-SGTMTFET structure gives very low leakage current IOFF (10−13 A/µm), remarkable improvement in ON current (10−4 A/µm) and the ION/IOFF ratio is 109. Also the ON current (ION) improves by 3 orders of magnitude compared with the Surrounding gate TFET. This new device undoubtedly, proves to be the best alternate for next generation low power and high speed applications. The analytical model has been compared with the simulator TCAD and an excellent conformity is achieved.