Abstract
The dispersion relations for the acoustic and optic phonons in HgTe and for the acoustic phonons in HgSe were determined by neutron inelastic scattering in three high symmetry directions. The effect of the free-carrier screening of the long-range electric field of LO phonons in HgTe was observed. The formalism of the rigid ion model is used for numerical calculations of the phonon dispersion relations and the phonon densities of states in HgTe and HgSe.
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