A neutron beam monitor based on silicon carbide semiconductor coated with 6LiF converter

Abstract

A neutron beam monitor was developed for the time-of-flight neutron reflectometer (NR) instrument at the China Mianyang Research Reactor (CMRR). The SiC neutron monitor employs a wide-bandgap silicon carbide (SiC) semiconductor detector coated with a 6LiF neutron converter film evaporated on a thin ceramic sheet. Given the relatively large active area [(10 × 10) mm2] and sufficiently thick epitaxial layer (30μm), the monitor can discriminate the gamma background from the signals. Prior to assembling the monitor, the I–V characteristics and alpha responses of the SiC detector were measured. Next, the SiC detector and 6LiF neutron converter were installed in a small aluminum shielding box, and the neutron and gamma responses were measured with an Am–Li neutron source and a 137Cs plus 60Co gamma source, respectively. The fabricated SiC neutron monitor was mounted inside the slit of the NR instrument (after the focusing neutron guide), and the intensity of the transmitted neutron beam was measured. To measure the incident neutron flux, the distinct triton peaks from the 6Li (n, α) T reaction were counted as normalized data for the NR instrument. This paper describes the fabrication details of the SiC neutron monitor, and discusses the preliminary measurements.