Abstract
A diode-transistor generator of high-voltage nanosecond pulses, which is based on an inductive energy storage and an opening switch in the form of an assembly of drift step-recovery diodes (DSRDs) connected in series, is considered. It allows switching of a voltage pulse with an amplitude of 12 kV and a rise time of 4 ns into a load of 75 Ω at a frequency of 10 kHz. The results of investigations of the process of disabling DSRDs with different thicknesses of the base regions and different diffusion-layer profiles are presented. The design of optimized DSRDs with reduced energy losses during disabling is described. It is shown that the use of an assembly of optimized DSRDs in the developed generator provides a twofold increase in the limiting switched energy.
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