A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

Abstract

Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .