A nanoporous AlN layer patterned by anodic aluminum oxide and its application as abuffer layer in a GaN-based light-emitting diode

Abstract

This work investigates a nanoporous aluminum nitride (AlN) layer prepared using ananodic aluminum oxide (AAO) process and its application as a buffer layer for aGaN-based light-emitting diode (LED) fabricated on sapphire substrate. Following thisAAO process, the average pore spacing and pore diameter of the nanoporous AlN layerwere in the ranges 180–200 nm and 100–150 nm, respectively. The light output power of theGaN-based LED with a nanoporous AlN layer was about 53% higher than that of aGaN-based LED without a nanoporous AlN layer at an injection current of 20 mA. At aninjection current of 80 mA, the light output power was increased by about 34%.