Abstract
Self-driven photodetectors are essential for many applications where it is unpractical to provide or replace power sources. Here, we report a new device architecture for self-driven photodetectors with tunable asymmetric Schottky junctions based on a nanomesh electrode. The vertical-channel nanomesh scaffold is composed of a hexagonally ordered nanoelectrode array fabricated via the nanosphere lithography technique. The top and bottom nanoelectrodes are separated by only 30 nm and the areal ratio of the two nanoelectrodes can be fine-tuned, which effectively modifies the geometric asymmetricity of the Schottky junctions in the photodetector devices. The self-driven photodetectors are fabricated by depositing the (FAPbI3)0.97(MAPbBr3)0.03 (MA = methylammonium, FA = formamidinium) perovskite films onto the nanomesh electrodes. Under the self-driven mode, the optimized device demonstrates a high detectivity of 1.05 × 1011 Jones and a large on/off ratio of 2.1 × 103. This nanomesh electrode is very versatile and can be employed to investigate the optoelectronic properties of various semiconducting materials.
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