Abstract
In this paper a quantitative determination of the elemental distributions across a ∼10 nm Ga 2O 3/GdGaO layer with a Pt metal gate cap on top of an InGaAs/AlGaAs/GaAs substrate is presented. Some effects of annealing on the elemental distribution across the Ga 2O 3/GdGaO oxide layer are described. The paper also discusses the analysis of the interface GaAs/Ga 2O 3/GGO at a sub-nm level by high-resolution HAADF STEM imaging.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
