Abstract
A flash memory with multilevel cell significantly reduces the memory per-bit cost. A 32 Mb multilevel-cell (MLC) flash memory storing two bits of data per cell achieves 32 Mb memory storage capacity using 16 M flash memory cells. This 32 Mb flash memory on a 0.6 /spl mu/m process has a 2.0/spl times/1.8 /spl mu/m/sup 2/ flash cell. In MLC operation, the logical flash memory cell achieves two bits per cell using four possible states, defined by four flash cell threshold voltage ranges. The relationship between the threshold voltage ranges stored in the flash memory cell and the corresponding logic levels is shown in this paper, which also shows a plot of the four threshold voltage distributions, each with a separation range.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
