Abstract
A 3–5 μm Cu@Sn core-shell powder was prepared by chemical plating. Based on the mixture of this Cu@Sn and Ag NPs (nanoparticles), a soldering material for third-generation semiconductors was prepared. The joints prepared with this soldering material had a shear strength of over 40 MPa at 25 °C. This joint did not fail after more than 600 thermal cycles from −40 °C to 140 °C. The special feature of this joint is that the energy potential difference between nanoparticles and micron particles generated in the surface force field during reflow promoted the surface pre-melting of the particles by releasing the excess energy. By this mechanism, it was possible to reduce the porosity of the sintered layer. At the same time, due to the high surface activity energy of nano-silver, the diffusion of the Sn atoms was promoted, further enhancing the bond strength.
Highlights
The third generation of wide band semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) has the advantages of high breakdown voltage, high power density, chemical resistance, high electron mobility and small dielectric constant, which enable SiC chips to achieve higher computing efficiency and withstand harsher service environments [1]
Aiming to replace micron silver particles, we developed a Cu@Sn micron particle
Sodium citrate and silver nitrate were uniformly dispersed in the reaction solution and the silver nanoparticles with controlled morphological size were prepared by controlling the ratio of reactants and reaction conditions
Summary
The third generation of wide band semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) has the advantages of high breakdown voltage, high power density, chemical resistance, high electron mobility and small dielectric constant, which enable SiC chips to achieve higher computing efficiency and withstand harsher service environments [1]. Low-temperature sintered silver nanoparticle technology is currently the most promising alternative to traditional soldering materials, other than Ag80Sn alloy soldering materials, for the application of thermal interface materials in wide-band semiconductor device packaging. It has a much greater potential for application because its performance is much better than that of gold–tin alloy soldering materials. As a thermal interface material for chip packaging, it becomes very critical to solve the shrinkage problem of silver nanoparticle sintered joints during high-temperature service. How to solve the shrinkage problem of silver nanoparticle sintered joints during high-temperature service becomes a very critical issue [11,12,13]. The combination of TLP technology and nano-silver sintering technology undoubtedly allows the nano-silver sintering technology to have a broader development direction
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