Abstract
Alternating layers of high- and low-resistivity silver thiogallate (AgGaS2) were grown sequentially by liquid-phase epitaxy on AgGaS2 substrates using the vertical dipping technique. High-resistivity layers were grown by using KCl-AgGaS2 solutions while low-resistivity layers were grown from Ge-AgGaS2-KCl solutions. Layer growth of such a multilayer device and demonstration of its electro-optic response for filter application are described.
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