Abstract

<h2>Summary</h2> With rapid progress in perovskite light-emitting diodes (PeLEDs), the electroluminescence performance of large-area is of increasing interest. We investigated why large-area performance lags behind that achieved in laboratory-scale devices and found that defects in perovskite films—emerging from thermal convection during solvent evaporation, as well as electronic traps formed during perovskite crystallization—are chief causes. Here, we report a molecular modification strategy that simultaneously eliminates pinholes in perovskite layers by controlling the dynamics of film formation and that passivates defects in perovskites by incorporating Br species, thereby preventing shorts and non-radiative recombination. The molecular modifier 1,3,5-tris (bromomethyl) benzene (TBB) also modulates the electronic structure of injection or transport materials to achieve improved charge injection and balanced charge transport. As a result, we demonstrate 20 mm × 20 mm green perovskite nanocrystal LEDs that achieve an external quantum efficiency (EQE) of over 16%, a record for large-area PeLEDs.

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