Abstract
Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.
Highlights
One such metal oxide semiconductor that has been investigated extensively is indium oxide (In2O3)
O 1 s spectrum of In2O3 was fitted with two peaks: a at 530.5 eV coming from indium-oxygen bonds and c at higher binding energy of 532.1 eV from oxygen vacancies[17]
In the case of POM/In2O3 film, two more peaks appeared: peak b at 531.5 eV corresponding to oxygen bonding in KWO3 and peak d at 532.9 eV related to –OH groups
Summary
Adrica Kyndiah[1], Abduleziz Ablat[1,2], Seymour Guyot-Reeb[1], Thorsten Schultz 3, Fengshuo Zu3,4, Norbert Koch 3,4, Patrick Amsalem[3], Stefano Chiodini5,7,TugbahanYilmaz Alic[6], YaseminTopal[6,9], Mahmut Kus[6,8], Lionel Hirsch[1], Sophie Fasquel1 & Mamatimin Abbas 1. Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance. This approach reduces off-current of the device by more than two orders of magnitude, and leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer.
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