A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure

Abstract

Small size and good coupling control between dots are the key parameters for useful coupled quantum dot devices. Using a new approach of electrostatically defined silicon double quantum dot device recently proposed, we design and simulate a silicon quantum dot structure that exhibits multi functionality. Control on potential tunnel barrier using side gates, as well as the preparation of series-coupled and parallel-coupled double quantum dot structure are demonstrated and explained by numerical simulation on electron distribution profile.