Abstract
This paper establishes an HCI (Hot Carrier Injection) aging model on NMOS device, focusing on the simultaneous degradation of multiple parameters (drain current in saturation region (Idsat) and threshold voltage (Vth)) in the process of extracting model parameters. In this paper, a matrix transformation method is used to convert the electrical parameters of device aging into SPICE model parameters, so as to construct the multi-dimensional model of device aging. In addition, the impact of temperature (T) and device size on the model coefficients is considered to improve the precision of aging model. The approach proposed in this work could also be used to model other devices’ aging process.
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