Abstract
In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur. This paper proposes a novel multi-level gate driver which can suppress the crosstalk phenomenon of the SiC MOSFETs in bridge arm. An auxiliary MOSFET branch between the gate and source of SiC MOSFET is adopted to generate negative and zero gate voltage when SiC MOSFET is turned off. The negative gate voltage may reduce the positive gate crosstalk voltage, and zero gate voltage may reduce negative gate crosstalk voltage. Both the simulations and experiments are carried out to verify the feasibility and high performance of the proposed multi-level gate driver. Compared to the conventional gate driver, the proposed multi-level gate driver reduces the positive crosstalk voltage to -2.2V, and the negative crosstalk voltage to -4.4V, respectively.
Highlights
silicon carbide (SiC) MOSFET is one of the most widely used wide bandgap devices in various industries, such as aerospace power supply, wireless power transmission, electrical vehicle drive and grid-connected converters [1,2,3]
The gate driver of the SiC MOSFET may be affected by the parasitic parameters, and crosstalk is one common phenomenon because of the parasitic parameters in the gate driver circuit [9,10]
The gate stray capacitor of the SiC MOSFET is charged and discharged by the series capacitor, which might be precharged by control of the auxiliary switch
Summary
SiC MOSFET is one of the most widely used wide bandgap devices in various industries, such as aerospace power supply, wireless power transmission, electrical vehicle drive and grid-connected converters [1,2,3]. If the crosstalk phenomenon generates positive gate voltage, the switching device would be falsely turned on and lead to a bridge short-circuit. The gate driver in [17,18,19] cannot suppress the crosstalk phenomenon generating negative gate voltage To solve this problem, literature [20,21,22] provide a low impedance gate driving circuit. In [23,24], a series circuit of auxiliary switch and capacitor is used to reduce crosstalk in bridge arm. The gate stray capacitor of the SiC MOSFET is charged and discharged by the series capacitor, which might be precharged by control of the auxiliary switch It reduces the influence of parasitic parameters on the gate driving loop.
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