Abstract

Lifetime estimation of power semiconductor devices have been widely investigated to improve the reliability and reduce the cost of maintenance of power converters. However in most reported work, the aging effect is not considered in the lifetime evaluation process due to the omission or limitation of thermal cycle counting method. Additionally, the electrical/thermal simulation and lifetime estimation are usually implemented in different simulators/platforms, for the same reason. Thus, to tackle these problems, a concise but comprehensive MOSFET model that enables electro-thermal modeling, aging and lifetime estimation on LTspice® circuit simulator is proposed in this paper. The idea comes from the fact that, MOSFET on-state resistance $R_{ds,on}$ is not only temperature dependent, but also widely accepted as the device failure precursor. In other words, as it carries critical information about instantaneous temperature and aging progress. Hence, co-simulation can be achieved by constructing electrical, thermal, and aging and lifetime sub-modules exclusively first, and using $R_{ds,on}$ , to build linkages among them. Averaged modeling technique is adopted due to the ease of establishing links among these three sub-modules, and fast simulation speed as compared to a switched converter model. Behavioral models are employed to realize the thermal cycles counting, stress accumulation and degradation evaluation. This paper demonstrates that it is possible to use a single simulation software to monitor performances of devices and circuits, and their lifetime estimation simultaneously. High-stress thermal cycling and long-term random mission profiles are applied to verify the correctness of the model and to mimic a 10-year load respectively. An accelerated aging trend can be observed in the long-term mission profile simulation, which is in agreement with the theory. Facilitated by the employment of averaged circuits, the proposed method is a good simulation/analytical tool to implement a long-term mission profile that requires reliability assessment.

Highlights

  • Reliability is one of the most challenging factors that needs thorough consideration when designing converters/inverters. It is especially critical for those devices which require to carry out challenging mission profiles while operating in severe environmental conditions

  • The degradation limit of Rds,on is set to 0.12 p.u. instead of 0.2 p.u., which is equivalent to 50 m

  • As the proposed model takes advantage of the electro-thermal averaged model (ETAM) which is independent of frequency, and the switching losses related terms are add-ons and are represented by equations, this model is well suited for assessing a device which deals with high switching frequency operation, long-term and complex mission profiles

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Summary

Introduction

Reliability is one of the most challenging factors that needs thorough consideration when designing converters/inverters. It is especially critical for those devices which require to carry out challenging mission profiles while operating in severe environmental conditions. It has attracted attention to future power supply design with increasing power density requirement. The associate editor coordinating the review of this manuscript and approving it for publication was Xiao-Sheng Si. supplies and any catastrophic failures both electrically and economically, reliability assessment and prediction of useful lifetime of power devices are widely investigated. The reliability of the circuits and systems can be greatly improved, and the maintenance cost can be saved

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