Abstract
In this paper, a MOS-based behavioral macro-model for ferroelectric capacitor is proposed. The macro-model consists of two VCCAPs and voltage control switches. A MOS-based circuit provides the control voltage of VCCAPs. The model parameters are extracted from the hysteresis loops measured or provided by the users. By adjusting the model parameters the accurate FE capacitor characteristics could be obtained. Since the behavioral model only consists of MOSFETs and capacitors, it can be simply added to SPICE simulator as a macro-model. Furthermore, this model can also simulate the fixed imprint, relaxation and fatigue effect by adjusting the model parameters based on the branch of hysteresis loop.
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