Abstract
In the present work the proximity effects during the electron-beam lithography of YBa 2Cu 3O 7 high temperature superconducting thin films deposited on two typical substrates (SrTiO 3 and MgO) were studied at various beam voltages (25, 50, and 75 kV) by means of the Monte Carlo simulation. The radial distributions of the absorbed electron energy density obtained for all possible sets of initial conditions were approximated by an analytical function (namely a combination of a double Gaussian and an exponential function) and the parameters of this function were calculated. The distributions obtained in the present work as well as the calculated parameters of the so-called “proximity function” can be used in a proper proximity effect correction algorithm as well as in a profile development model.
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