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Abstract
A Monte Carlo investigation of the high-frequency performance of partially-depleted silicon-on-insulator MOSFETs is presented. From static current–voltage characteristics to the RF dynamic and noise performance, the simulator is able to properly reproduce the experimental measurements for the device under test with the need of only two model parameters, the rate of diffusive surface scattering mechanisms and the threshold voltage. Once the model is validated for a 90 nm effective gate length device, a forecast of the dynamic and noise performance of the device when the gate length is downscaled is carried out and the influence of scaling on internal transport quantities is discussed.
Published Version
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